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Gallium Antimonide GaSb

Description

Gallium Antimonide GaSb, a semiconductor of the group III–V compounds with zinc-blende lattice structure, is synthesized by 6N 7N high purity gallium and antimony elements, and grown to crystal by LEC method from directionally frozen polycrystalline ingot or VGF method with EPD<1000cm -3. GaSb wafer can be sliced into and fabricated afterward from single crystalline ingot with a high uniformity of electrical parameters, unique and constant lattice structures, and low defect density, highest refractive index than the most other non-metallic compounds. GaSb can be processed with a wide choice in exact or off orientation, low or high doped concentration, good surface finish and for MBE or MOCVD epitaxial growth. Gallium Antimonide substrate is being utilized in the most cutting-edge photo-optic and optoelectronic applications such as the fabrications of photo detectors, infrared detectors with long life, high sensitivity and reliability, photoresist component, infrared LEDs and lasers, transistors, thermal photovoltaic cell and thermo-photovoltaic systems.  

Delivery

Gallium Antimonide GaSb at Western Minmetals (SC) Corporation can be offered with n-type, p-type and undoped semi-insulating conductivity in size of 2” 3” and 4” (50mm, 75mm, 100mm) diameter, orientation <111> or <100>, and with wafer surface finish of as-cut, etched, polished or high quality epitaxy ready finishes. All slices are individually laser scribed for identity. Meanwhile, polycrystalline gallium antimonide GaSb lump is also customized upon request to the perfect solution. 


Details

Tags

Technical Specification

Gallium Antimonide

GaSb

GaSb-W1

Gallium Antimonide GaSb substrate is being utilized in the most cutting-edge photo-optic and optoelectronic applications such as the fabrications of photo detectors, infrared detectors with long life, high sensitivity and reliability, photoresist component, infrared LEDs and lasers, transistors, thermal photovoltaic cell and thermo-photovoltaic systems.  

Items Standard Specification
1 Size 2" 3" 4"
2 Diameter mm 50.5±0.5 76.2±0.5 100±0.5
3 Growth Method LEC LEC LEC
4 Conductivity P-type/Zn-doped, Un-doped, N-type/Te-doped
5 Orientation (100)±0.5°, (111)±0.5°
6 Thickness μm 500±25 600±25 800±25
7 Orientation Flat mm 16±2 22±1 32.5±1
8 Identification Flat mm 8±1 11±1 18±1
9 Mobility cm2/V.s 200-3500 or as required
10 Carrier Concentration cm-3 (1-100)E17 or as required
11 TTV μm max 15 15 15
12 Bow μm max 15 15 15
13 Warp μm max 20 20 20
14 Dislocation Density cm-2 max 500 1000 2000
15 Surface Finish P/E, P/P P/E, P/P P/E, P/P
16 Packing Single wafer container sealed in Aluminum bag.
Linear Formula GaSb
Molecular Weight 191.48
Crystal structure Zinc blende
Appearance Gray crystalline solid
Melting Point 710°C
Boiling Point N/A
Density at 300K 5.61 g/cm3
Energy Gap 0.726 eV
Intrinsic resistivity 1E3 Ω-cm
CAS Number 12064-03-8
EC Number 235-058-8

Gallium Antimonide GaSb at Western Minmetals (SC) Corporation can be offered with n-type, p-type and undoped semi-insulating conductivity in size of 2” 3” and 4” (50mm, 75mm, 100mm) diameter, orientation <111> or <100>, and with wafer surface finish of as-cut, etched, polished or high quality epitaxy ready finishes. All slices are individually laser scribed for identity. Meanwhile, polycrystalline gallium antimonide GaSb lump is also customized upon request to the perfect solution. 

GaSb-W

PC-28

InP-W4

GaSb-W3

Procurement Tips

  • Sample Available Upon Request 
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  • COA/COC Quality Management
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  • Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements NDA
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment

Gallium Antimonide GaSb


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